The ohmic electrode and the production manner null for n die SiC

摘要

PROBLEM TO BE SOLVED: To provide an Ohmic electrode stable in a high temp. environment which has a low contact resistance by laying a Hf Ta, Ti, Zr, V or W metal film on a film of a nitride of Hf, Ta, Ti or Zr formed can an n-type SiC. ;SOLUTION: On an n-type SiC single crystal substrate 1 N2 is flowed at 20cm³/min to hold the internal pressure at 1E-2Torr in a film forming chamber, and an r-f power of 400W is fed to form a TiN layer 2 by the reactive sputter vapor deposition. The gas seed for maintaining a plasma of the sputter vapor deposition is gradually changed from N2 to Ar to form a transition layer 3. Ar is flowed at 20cm³/min to hold the chamber internal pressure at 1E-2Torr and an r-f power of 400W is fed to form a Ti layer 4 by the sputter vapor deposition and it is heat-treated at 1050°C for 20min in vacuum atmosphere. This reduces the contact resistance and thereby realizes an Ohmic current stable with respect to the contact resistance in a high-temp. environment.;COPYRIGHT: (C)1997,JPO