(57) I will be disclosed vertical external cavity surface emitting laser optical pumping of the semiconductor (OPS-EXSEL) [summary] passive mode-locking. This laser is mode-locked to form a part of the external cavity, semiconductor saturable absorber mirror by (SESAM). Both of the limits of the output of the electric pumping surface emitting laser and limits, of the beam quality of the edge-emitting laser is overcome. The laser uses a semiconductor wafer grown adjacent to a single Bragg-mirror structure of the quantum well stack. Is focused onto the surface of the wafer, by absorption in the barrier region, the light from the multi-mode high-power diode laser in one or more, and pumping the well. It can be increased about 104 times than the mode area on the surface of the edge emitting laser, the area of the laser mode on the active mirror on, whereby it is possible to produce large pulse energy and high power. At the same time, the external cavity resonator, to strengthen the basic mode of operation of the circular, in the beam close to the diffraction limit. This laser, by eliminating the influence of the cavity resonator coupled to an external pulse compression, it is possible to obtain a pulse time of sub-picosecond. By forming the pulses by using a band-gap engineering, or can be, it can also be integrated with the saturable absorber and the gain on the same wafer. Therefore, this invention can be formed with a high output in the beam close to the diffraction limit, the pulse time of the sub-picosecond, and a multi-GHz repetition rate, the pulse laser source effective stable, and the band gap engineering to the operation of accessible wavelengths, in a wide range by.
展开▼
