Inspection pattern of semiconductor equipment and manufacturing process management manner null

摘要

PROBLEM TO BE SOLVED: To detect under polishing and over polishing accurately, when a buried interconnection is formed through chemical-mechanical polishing.;SOLUTION: An isolation pattern 112 comprising an embedded conductive film is provided on a lower layer interconnection layer. A recess is formed in the pattern 112 by dishing. Consequently, the recess is transferred onto an interlayer insulation film, on which an upper layer interconnection layer is formed. When under polishing occurs in the polishing process of the upper layer interconnection layer, a metal of the second interconnection layer is left in the transferred recess and detected by means of an SEM and the like, thus detecting under polishing.;COPYRIGHT: (C)2001,JPO