首页> 外国专利> ELECTRON EMISSION BODY AND MANUFACTURING METHOD THEREFOR, COLD CATHODE FIELD ELECTRON EMISSION ELEMENT AND MANUFACTURING METHOD THEREFOR, AND COLD CATHODE FIELD ELECTRON EMISSION DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

ELECTRON EMISSION BODY AND MANUFACTURING METHOD THEREFOR, COLD CATHODE FIELD ELECTRON EMISSION ELEMENT AND MANUFACTURING METHOD THEREFOR, AND COLD CATHODE FIELD ELECTRON EMISSION DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

机译:电子发射体及其制造方法,冷阴极场电子发射元件及其制造方法,冷阴极场电子发射显示装置及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission element having a structure hardly causing damage to an electron emission part carbon nanotube or the like.;SOLUTION: This cold cathode field electron emission element comprises a cathode electrode 11 provided on a support body 10; an insulation layer 12 formed on the support body 10 and the cathode electrode 11; a gate electrode 13 formed on the insulation layer 12; opening parts 14A, 14B formed in the gate electrode 13 and the insulation layer 12; and an electron emission part 15 formed on a portion of the cathode electrode 11 positioning in a bottom part of the opening part 14B. The electron emission part 15 comprises a matrix 21, and a carbon nanotube structure 20 embedded in the matrix 21 in a projecting state of the tip part.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种冷阴极场电子发射元件,其结构几乎不会损坏电子发射部分碳纳米管等。解决方案:该冷阴极场电子发射元件包括设置在支撑体上的阴极电极11。身体10;绝缘层12形成在支撑体10和阴极电极11上;形成在绝缘层12上的栅电极13;在栅电极13和绝缘层12中形成的开口部分14A,14B;电子发射部分15形成在位于开口部分14B的底部中的阴极电极11的一部分上。电子发射部分15包括基体21和以尖端部分的突出状态嵌入基体21中的碳纳米管结构20。版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003229044A

    专利类型

  • 公开/公告日2003-08-15

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20020208625

  • 发明设计人 YAGI TAKAO;SHIMAMURA TOSHIKI;

    申请日2002-07-17

  • 分类号H01J1/304;H01J9/02;H01J31/12;

  • 国家 JP

  • 入库时间 2022-08-22 00:20:25

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