BIT LINE CONTROL DECODER CIRCUIT, VIRTUAL GROUND TYPE NONVOLATILE SEMICONDUCTOR MEMORY PROVIDED WITH IT, AND READ-OUT METHOD FOR VIRTUAL GROUND NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To realize high speed read-out by suppressing effectively a leak current of an adjacent cell in a virtual ground type nonvolatile semiconductor memory.;SOLUTION: At the time of read-out operation, a ground potential GND is applied to a bit line SBL5 connected to a source region of one memory cell transistor MC04 being object of read-out. Also, a read-out drain bias potential Vread is applied to a bit line SBL4 connected to a drain region of the memory cell transistor MC04. A bit line SBL3 connected to a drain region of a first adjacent memory cell transistor is made a floating state. The same potential Vdb as a read-out drain bias potential Vread is applied to a bit line SBL2 connected to a drain region of a second adjacent memory cell transistor MC02.;COPYRIGHT: (C)2003,JPO