Photo thyristor component and bidirectional photo thyristor component

摘要

PROBLEM TO BE SOLVED: To prevent zero-cross operation failures by a parasitic capacitance of a semi-insulating film to operate stably an AC voltage in a photo-thyristor element incorporated with a MOSFET for obtaining a zero-cross function, comprising a photodiode or a phototransistor for photodriving a gate of the MOSFET, and having a high breakdown voltage passivation film provided with an oxygen dope semi-insulating film on an insulation film. SOLUTION: A semi-insulating film 13 is patterned so as not to enter parasitic resistance by a semi-insulation film 13 between a gate and a source of a MOSFET 14, and between the gate of the MOSFET 14 and a cathode of a thyrister 30. Furthermore, since a punch-through voltage is stabilized, regions (a part of distance Lp) above the base and a collector junction j2 of a photoresistor 21 and above a junction j1 of a P-type diffused region adjacent so as to enclose therewith, and regions between them are coated with the semi- insulating film 13 or a metal layer 20 of an Al wiring, etc., for shielding.