THIN FILM DEPOSITION METHOD BY PLASMA CVD PROCESS AND ANTIREFLECTION MULTILAYER BODY

摘要

PROBLEM TO BE SOLVED: To provide a thin film deposition method by a plasma CVD process, by which the film thickness and the surface of a thin film can be controlled, the thin film can be deposited with high productivity, and the production cost can be suppressed when an antireflection thin film is deposited on a base material, and to provide an antireflection multilayer body.;SOLUTION: The thin film deposition method comprises introducing a prescribed gas into a reaction chamber, arranging the base material on a film deposition drum and a counter electrode, making the reactive gas into plasma, and depositing a thin film on the base material. The base material is supplied by a system that the base material is continuously wound up on a roll from the other roll. A raw material gas, an active gas, and an inert gas are introduced into the reaction chamber, and the base material is etched by the active gas and the inert gas, and at the same time, an oxide thin film is formed as a ground layer on the base material, so that the carbon content in the oxide thin film is continuously decreased in the thickness direction from the base material side. Further, an unevenness layer is formed on the oxide thin film by introducing a raw material gas and an active gas into the reaction chamber, then increasing the pressure in the reaction chamber so as to grow raw material molecules to a particulate form in a vapor phase and sticking the particulate material on the surface of the base material.;COPYRIGHT: (C)2004,JPO