THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, SUBSTRATE FOR LIQUID-CRYSTAL IMAGE DISPLAY DEVICE, AND LIQUID-CRYSTAL IMAGE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a channel-etch-type TFT in which high mobility is obtained, a method of manufacturing the same, a substrate for liquid-crystal image display device in which the TFTs are provided, and the liquid-crystal image display device.;SOLUTION: In manufacturing the channel-etch-type TFT, a semiconductor film 5 having a film thickness of 50-100 nm and a contact film 7 having a film thickness of 20-100 nm are deposited. A channel-etching step for the TFT is initiated by dry-etching a metal electrode film 9 and the contact film 7 with the high electric power of plasma (a source/drain-electrode-forming etching step), wherein the contact film 7 is kept remaining a film thickness of 20 nm or more after the etching. Subsequently, the residual contact film 7 in a region between a source electrode 9a and a drain electrode 9b on the semiconductor film 5 is removed by dry etching by the low electric power of plasma to form a channel region 21 (a channel-region-forming etching step).;COPYRIGHT: (C)2003,JPO