METHOD OF MANUFACTURING III-V COMPOUND SEMICONDUCTOR CRYSTAL CONTAINING ANTIMONY

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a III-V compound semiconductor crystal containing antimony for upgrading the quality of a compound semiconductor crystal containing antimony grown by using a metal-organic vapor- phase growth method.;SOLUTION: This method is to manufacture a III-V compound semiconductor crystal containing antimony, which contains at least two kinds or more of group-V components, one of which is antimony, by alternately and periodically repeating a first process of simultaneously supplying a source gas for a group-III component and a source gas for antimony, and a second process of simultaneously supplying the source gas for the group-III component and source gases for group-V components other than antimony.;COPYRIGHT: (C)2003,JPO