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PLASMA CVD DEVICE AND CONTROL METHOD THEREOF

机译:等离子体化学汽相淀积装置及其控制方法

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of preventing attraction of an insulating substrate to a mask member by the charge-up, and a control method thereof. ;SOLUTION: The plasma CVD device comprises a vacuum chamber capable of maintaining vacuum, a gas feed/exhaust device to exhaust gas into a vacuum chamber while feeding gas therein, a first electrode capable of applying the high frequency power and connected to a high frequency power source, a second electrode which is disposed facing the first electrode with a substrate placed thereon, and a mask member disposed between the first electrode and the second electrode, and a metal member insulated from the grounding electric potential is disposed on a back side of the mask member.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种等离子体CVD装置及其控制方法,该等离子体CVD装置能够防止绝缘基板因充电而吸引至掩模构件。 ;解决方案:等离子CVD装置包括一个能够保持真空的真空室,一个在进给气体的同时将气体排入真空室的供气/排气装置,一个能够施加高频功率并连接到高频的第一电极电源,与第一电极相对设置并在其上放置有基板的第二电极,以及位于第一电极和第二电极之间的掩模部件,以及与接地电位绝缘的金属部件设置在电源的背面。面具成员。;版权所有:(C)2003,日本特许厅

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