PLASMA CVD APPARATUS, PROGRAM FOR CONTROLLING PLASMA CVD APPARATUS, AND METHOD FOR CLEANING PLASMA CVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can effectively clean a reaction chamber with plasma; a program for controlling the plasma CVD apparatus; and a method for cleaning the plasma CVD apparatus.;SOLUTION: A high-frequency power source 104 of the plasma CVD apparatus has an output impedance of 50 Ω. A composition of a substance converted into plasma changes as a cleaning operation progresses, and impedance in the reaction chamber changes. A second detecting part 241 detects a change of voltage and an electric current to detect the impedance. An adjusting part 242 controls the capacitance of a second variable-capacitance condenser 225 by rotating a second motor 234 so that the impedance matches with the output impedance.;COPYRIGHT: (C)2008,JPO&INPIT