METHOD AND STRUCTURE OF LOW-CAPACITANCE ESD-RESISTANT DIODE

摘要

PROBLEM TO BE SOLVED: To provide a diode wherein it has a switching speed exceeding 1 GHz, and its electrostatic capacitance is smaller than 0.1 pF, and further, its breakdown voltage of its ESD-resistance is at least 500 V.;SOLUTION: The ESD-resistant diode has a first conduction type anode and a second conduction type cathode provided under the anode. At least one of the anode and the cathode has a plurality of diffusion regions contacted with each other. Each of the anode and the cathode is provided between adjacent separating regions to each other, and its scope is defined by the adjacent separating regions. An n⁺-region 12 can be formed concurrently with the buried sub-collector of a bipolar transistor. Subsequently, an n^--region 14 can be formed as a portion of the epitaxial growth of the bipolar transistor. A p⁺-region is formed by using the source/drain of a MOSFET.;COPYRIGHT: (C)2004,JPO