ANISOTROPIC ETCHING METHOD FOR SILICON CRYSTAL, METHOD OF MANUFACTURING INK CHANNEL PLATE, INK CHANNEL PLATE, INK-JET PRINT HEAD, AND INK JET PRINTER

摘要

PROBLEM TO BE SOLVED: To etch the bottom face of an ink pool well and to block a refined thin-film mask pattern at the opening of the ink pool. ;SOLUTION: A method of manufacturing an ink channel plate includes a process for forming a layer on a single crystal silicon substrate 2 as a sacrificial layer 5, a process for forming a thin-film mask pattern 4 having an aperture with a width on the order of several micrometers on the sacrificial layer 5, a process for removing the sacrificial layer 5 using a silicon crystal anisotropic chemical etching solution 6 to form a cavity between the thin-film mask pattern 4 and the single crystal silicon substrate 2 and for chemically etching the single crystal silicon substrate 2, and a process for forming a protective film 12 closing the thin-film mask pattern 4. The sacrificial layer 5 is made of a material that can be selectively etched at a speed higher than the speed at which the single crystal silicon substrate 2 is etched.;COPYRIGHT: (C)2003,JPO