POROUS SILICON OXIDE THIN FILM AND PRODUCTION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To form a silicon oxide thin film which has a controlled porous structure. ;SOLUTION: A copolymer thin film is deposited by plasma polymerization of a gaseous mixture of a silicon-based monomer and a hydrocarbon-based monomer in a fixed ratio. After that, the copolymer thin film is further treated by an electric discharge with oxygen or an oxygen-containing gas as a plasma source, and the polymer component originated from the hydrocarbon-based monomer is removed by etching, and simultaneously, the silicon-based polymer part is oxidized and converted into silicon oxide to obtain the porous silicon oxide thin film.;COPYRIGHT: (C)2003,JPO