METHOD FOR GROWING SINGLE CRYSTAL BY SUBLIMATION PROXIMITY METHOD AND APPARATUS OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method in which a single crystal film of SiC is rapidly formed on a substrate, and the crystallinity of the single crystal film is observed in situ to optimize the single crystal forming condition.;SOLUTION: This single crystal forming apparatus 100 has a crucible 101 in which the single crystal is formed and grown, an insulating material 102 surrounding the crucible 101, a RF work coil 103 for heating the crucible 101 from outside, a stainless vacuum tank 105 containing a high frequency power source 104 and the crucible 101 and others, a pyrometer 106 measuring the temperature of the crucible 101, a pressure gauge 107 measuring the pressure within the stainless vacuum tank 105, a flow rate controller 108 controlling the Ar gas flow rate into the crucible 101, an energy dispersive X-ray diffractometer 109, a computer 110 for controlling the pressure within the stainless vacuum tank 105 and the temperature of the crucible 101.;COPYRIGHT: (C)2003,JPO