首页> 外国专利> Reducing polarization dependent loss caused by polarization dependent wavelength shift using core over-etch for planar lightwave circuit fabrication

Reducing polarization dependent loss caused by polarization dependent wavelength shift using core over-etch for planar lightwave circuit fabrication

机译:使用平面光波电路制造中的核心过蚀刻来减少由偏振相关的波长偏移引起的偏振相关损耗

摘要

A method of making a polarization insensitive optical waveguide structure. An optical core layer is formed on a substrate, wherein the optical core layer has a higher refractive index than the substrate. A mask is formed over the optical core layer. The unmasked areas of the optical core layer are then over-etched to define the core, wherein the over-etching removes the unmasked area of the optical core layer and a portion of the substrate disposed beneath the unmasked area, and defines the optical core. The mask is subsequently removed from the optical core. A cladding layer is then formed over the optical core and the substrate, the cladding layer having a lower refractive index than the optical core, to form a polarization insensitive optical waveguide structure. The amount of over-etching can be controlled to control an amount of substrate disposed beneath the unmasked area of the optical core layer that is removed. The amount of substrate removed, in turn, controls the polarization sensitivity of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined to minimize the polarization dependent wavelength shift and the polarization dependent loss of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined in accordance with a blanket stress of the cladding layer. The over-etching can be within a range between 7.5 percent and 30 percent.
机译:一种制造对偏振不敏感的光波导结构的方法。在基板上形成光芯层,其中,光芯层的折射率比基板高。在光学芯层上形成掩模。然后,对光芯层的未掩膜区域进行过蚀刻以限定芯,其中,该过蚀刻去除了光芯层的未掩膜区域和设置在未掩膜区域下方的一部分基板,并限定了光芯。掩模随后从光芯上移除。然后在光芯和基板上形成包层,该包层具有比光芯低的折射率,以形成对偏振不敏感的光波导结构。可以控制过度蚀刻的量以控制设置在被去除的光学芯层的未掩膜区域下方的基板的量。所去除的衬底的量又控制光波导结构的偏振灵敏度。可以确定在过蚀刻期间去除的衬底部分的量,以最小化光波导结构的偏振相关的波长偏移和偏振相关的损耗。可以根据覆层的覆盖应力确定在过蚀刻期间去除的部分基板的量。过度蚀刻可以在 7.5 %和 30 %之间的范围内。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号