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Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
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机译:具有基本上没有生长缺陷的外延层的单晶硅晶片
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摘要
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited.
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