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Early response to plasma/charging damage by special pattern design of active region
Early response to plasma/charging damage by special pattern design of active region
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机译:通过有源区的特殊图案设计,对等离子体/充电损坏的早期响应
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摘要
A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.
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