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Method of manufacturing a double-heterojunction bipolar transistor on III-V material
Method of manufacturing a double-heterojunction bipolar transistor on III-V material
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机译:在III-V材料上制造双异质结双极晶体管的方法
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摘要
The invention relates to a method of manufacturing a double heterojunction bipolar transistor (1) comprising successively at least one sub-collector layer, a collector layer, a base layer and a metallic layer (10) deposited on the said base layer; the said metallic layer (10) being extended towards a contact pad (110) of the base by an underetched metallic “air bridge” (100), characterized in that producing the said “air bridge” (100) includes the following steps:;effecting a first localized etching under the said bridge, this first etching being selective so as to etch the sub-collector layer laterally; and;effecting a second localized etching under the said bridge, this second etching being selective so as to vertically etch at least the collector layer.
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