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Method and circuit layout for reducing post chemical mechanical polishing defect count

机译:减少化学机械抛光后缺陷数量的方法和电路布局

摘要

A method and a circuit layout on a substrate of a semiconductor wafer, suitable for reducing defects during a chemical mechanical polishing process. On the substrate, the circuit layout comprises a plurality of strips of first circuit structure and at least two strips of second circuit structure located on the substrate. Each of the strips of second circuit structure respectively links the front end and the rear end of the plurality of strips of the first circuit structure for the purpose of averaging polishing pressure performed upon the front end and the rear end of the plurality of strips of the first circuit structure during the chemical mechanical polishing process for reducing defects.
机译:一种在半导体晶片的衬底上的方法和电路布局,适于减少化学机械抛光过程中的缺陷。在基板上,电路布局包括位于基板上的多个第一电路结构条和至少两个第二电路结构条。第二电路结构的每个条带分别连接第一电路结构的多个条带的前端和后端,以平均化在第一电路结构的多个条带的前端和后端上执行的抛光压力。第一电路结构在化学机械抛光过程中用于减少缺陷。

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