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In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect
In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect
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机译:磁阻效应大的面内各向异性三层磁夹层结构
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摘要
Uniaxial magnetic anisotropy was found in the Fe/Co/Cu/Co magnetoresistive structures deposited on Si (100) substrates. Samples magnetized along an easy anisotropy axis showed extremely sharp magnetization and magnetoresistance switching at low fields and maximum giant magnetoresistance of 9.5% at 5K (5.5% at room temperature) for the samples with 5 nm of Fe,5 nm of Co, 2.5 nm of Cu and 2 nm of Co. These results were advantageous compared to Co/Cu/Co trilayers grown on Cr/Cu buffer which did not exhibit uniaxial anisotropy. Deposition on spinning wafers allowed excluding substrate related anisotropy. An existing magnetic field in the magnetron sputtering system with the strength of 32 Oe at the sample location was found the most probable source of the induced uniaxial anisotropy.
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机译:在沉积在Si( 100 B>)衬底上的Fe / Co / Cu / Co磁阻结构中发现了单轴磁各向异性。沿易各向异性轴磁化的样品在5K Fe,5 nm Co,2.5 nm Co Cu和2 nm的Co。与在不显示单轴各向异性的Cr / Cu缓冲液上生长的Co / Cu / Co三层相比,这些结果是有利的。在旋转的晶片上进行沉积可以排除与基底相关的各向异性。磁控溅射系统中样品位置的强度为32 Oe的现有磁场被发现是诱发单轴各向异性的最可能来源。
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