首页> 外国专利> METHOD FOR FABRICATING REFLECTIVE/PROTECTIVE OVERLAYERS MAGNETICALLY ARRAYED ON A MAGNETORESISTANCE SENSOR, AND THE MAGNETORESISTANCE SENSOR, ESPECIALLY IN RELATION TO AN OXIDE STRUCTURE FOR COVERING A FREE LAYER

METHOD FOR FABRICATING REFLECTIVE/PROTECTIVE OVERLAYERS MAGNETICALLY ARRAYED ON A MAGNETORESISTANCE SENSOR, AND THE MAGNETORESISTANCE SENSOR, ESPECIALLY IN RELATION TO AN OXIDE STRUCTURE FOR COVERING A FREE LAYER

机译:制造磁性地涂在磁阻传感器上的反射/保护覆盖层的方法以及磁阻传感器,特别是与用于覆盖自由层的氧化物结构有关的方法

摘要

PURPOSE: A method for fabricating reflective/protective overlayers magnetically arrayed on an MR(Magnetoresistance) sensor and the MR sensor are provided to guarantee a high-quality border between a covered oxide structure and a lower sensor structure, and to oxidize the border after depositing a metal buffer layer, thereby realizing an easy control. CONSTITUTION: A sensor structure having a free layer deposited on a lower layered structure is provided(60). An oxide structure for covering the free layer is deposited(62). The step of depositing the oxide structure(62) comprises the steps as follows. A metal buffer layer is deposited while covering the free layer(64). An overlayer is deposited while covering and contacting the metal buffer layer(66). To form a metal buffer layer oxide, the metal buffer layer is oxidized(68).
机译:目的:提供一种用于制造磁性排列在MR(磁阻)传感器上的反射/保护覆盖层的方法,以及MR传感器,以确保覆盖的氧化物结构和下部传感器结构之间的高质量边界,并在沉积后氧化边界金属缓冲层,从而实现容易的控制。组成:提供了一种传感器结构,该传感器结构具有沉积在下层结构上的自由层(60)。沉积覆盖自由层的氧化物结构(62)。沉积氧化物结构(62)的步骤包括以下步骤。在覆盖自由层(64)的同时沉积金属缓冲层。在覆盖并接触金属缓冲层(66)的同时沉积覆盖层。为了形成金属缓冲层氧化物,金属缓冲层被氧化(68)。

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