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Determining transistor widths using the theory of logical effort

机译:使用逻辑努力理论确定晶体管宽度

摘要

An apparatus and method for finding suitable transistor sizes for complex logic networks. An electrical logical effort model of a logic circuit is made by replacing each logic element with a simple electrical model and retaining the wiring topology of the original circuit. The logical effort model is a DC circuit with parameters that depending only on the gain chosen for the logic elements in the critical path, the stray capacitance of critical connections, and the logical effort of each logic element. A circuit simulation of the logical effort model produces voltages proportional to desired transistor widths. In working on the electrical model, the circuit simulator merely solves the set of simultaneous equations implied by the model. Alternate methods are also described.
机译:一种用于为复杂逻辑网络找到合适的晶体管尺寸的装置和方法。通过用简单的电气模型替换每个逻辑元素并保留原始电路的布线拓扑,可以构建逻辑电路的电气逻辑努力模型。逻辑工作量模型是一个直流电路,其参数仅取决于为关键路径中的逻辑元素选择的增益,关键连接的杂散电容以及每个逻辑元素的逻辑工作量。逻辑努力模型的电路仿真产生与所需晶体管宽度成比例的电压。在处理电气模型时,电路仿真器仅求解模型所隐含的联立方程组。还介绍了其他方法。

著录项

  • 公开/公告号US6629301B1

    专利类型

  • 公开/公告日2003-09-30

    原文格式PDF

  • 申请/专利权人 SUN MICROSYSTEMS INC.;

    申请/专利号US20000663456

  • 发明设计人 IVAN SUTHERLAND;JOSEPHUS EBERGEN;

    申请日2000-09-15

  • 分类号G06F175/00;

  • 国家 US

  • 入库时间 2022-08-22 00:05:12

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