Low-temperature HDI fabrication

摘要

Components or solid-state chips having electrical contacts containing copper are laminated to Kapton dielectric film, and through vias are formed down to copper-containing material of the component. A fabrication method is described for making reliable connections to the copper-containing materials. The method includes precoating the copper-containing material with SPIE, together with at least argon plasma cleaning, and possibly fluorine plasma etching, of the vias and copper material exposed at the bottoms of the vias.