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Integrated CMOS structure for gate-controlled buried photodiode
Integrated CMOS structure for gate-controlled buried photodiode
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机译:用于栅极控制的埋入式光电二极管的集成CMOS结构
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摘要
A light-sensing diode fabricated in a semiconductor substrate having a surface protected by an insulator, comprising a first region of one conductivity type in this substrate, a second region of the opposite conductivity type forming a junction with the first region in the substrate; this junction having a convoluted shape, providing two portions generally parallel to the surface, and a constricted intersection with the surface; and a gate for applying electrical bias across the junction, this gate positioned on the insulator such that it covers all portions of the junction intersection with the surface, thereby creating a gate-controlled photodiode.
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