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Method and apparatus for dry/catalytic-wet steam oxidation of silicon
Method and apparatus for dry/catalytic-wet steam oxidation of silicon
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机译:用于硅的干/催化湿蒸汽氧化的方法和设备
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摘要
A configuration of various chemical compound generators coupled to a furnace provides the environment for formation of extremely thin oxides of silicon on a wafer. Dichloroethylene is reacted with oxygen in a first heated reaction chamber and reaction products therefrom are diluted with a gas such as nitrogen and then introduced into a vertically oriented furnace maintained at an elevated temperature and having rotating wafers therein. Hydrogen and oxygen are catalytically reacted to form steam in a second heated reaction chamber, the steam is diluted with a gas such as nitrogen and introduced into the vertical diffusion furnace. In a further aspect of the present invention, MOSFETs having gate dielectric layers of extremely thin oxides of silicon are formed.
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