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Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
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机译:低温下通过高密度等离子体HDP-CVD沉积非晶硅膜
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摘要
Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.
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