Reaction prcesses for low temperature (<150 deg C) plasma enhanced deposition of hydrogenated amorphous silicon thin film transistors on transparent plastic substrates

摘要

This article presents mechanisms for low temeprature (<150 deg C) rf plasma enhanced chaemical vapor dposition of silicon and silicon nitride thin films that lead to suffcient electronic quality for thin film transistor (TFT) fabrication and operation.For silicon depositin,hydrogen abstratcktion and etching,and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at < 150 deg C.