High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x0.69) circuit device

摘要

A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or Al_xGa_1−xN(x0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W₂C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W₂C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.