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Tetrahydrofuran-adducted group II -diketonate complexes as source reagents for chemical vapor deposition
Tetrahydrofuran-adducted group II -diketonate complexes as source reagents for chemical vapor deposition
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机译:四氢呋喃加成的II-二酮酸酯配合物作为化学气相沉积的原料
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摘要
Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal -diketonate adducts of the formula M(-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
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