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Deposition of Ru and RuO2 Thin Films Employing Dicarbonyl Bis-Diketonate Ruthenium Complexes as CVD Source Reagent

机译:以二羰基双-二酮酸酯钌配合物为CVD源试剂沉积Ru和RuO2薄膜

摘要

[[abstract]]Reaction of Ru-3(CO)(12) with 6 eq. of beta-diketone ligands (hfac) H, (tmhd) H, (acac) H and (tfac) H at 160 - 170 degreesC in a hydrocarbon solvent (pentane or hexane) affords the diketonate complexes [Ru(CO)(2)( hfac)(2)] ( 1), [Ru(CO)(2)(tmhd)(2)] (2), [Ru(CO)(2)(acac)(2)] (3) and [Ru(CO)(2)(tfac)(2)] (4) in high yields. These ruthenium complexes were characterized by spectroscopic methods; a single crystal X-ray diffraction study was carried out on one isomer of the tfac complex (4a), revealing an octahedral coordination geometry with two CO ligands located at cis-positions and with the CF3 groups of the beta-diketonate ligands trans to the CO ligands. Thermogravimetric analysis of complex ( 1) showed an enhanced volatility compared to the parent acac complex ( 3), attributed to the CF3 group reducing intermolecular attraction. Employing complexes ( 1) and ( 2) as CVD source reagents, ruthenium thin films can be deposited at temperatures of 350 degreesC - 450 degreesC under an H-2 atmosphere or at temperatures of 275 degreesC - 400 degreesC using a 2% mixture of O-2 in argon as carrier gas. For deposition carried out using complex ( 1) and under 100% O-2 atmosphere, RuO2 thin films with a preferred ( 200) orientation were obtained. The as-deposited thin films were characterized by surface and physical analytical techniques, such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction analysis (XRD) and four-point probe measurement.
机译:[[抽象]] Ru-3(CO)(12)与6 eq。的反应在烃溶剂(戊烷或己烷)中在160-170℃下对β-二酮配体(hfac)H,(tmhd)H,(acac)H和(tfac)H进行纯化,可得到二酮酸酯络合物[Ru(CO)(2) (hfac)(2)](1),[Ru(CO)(2)(tmhd)(2)](2),[Ru(CO)(2)(acac)(2)](3)和[ Ru(CO)(2)(tfac)(2)](4)高收率。这些钌配合物通过分光光度法表征。对tfac配合物(4a)的一个异构体进行了单晶X射线衍射研究,揭示了八面体配位几何结构,其中两个CO配体位于顺式位置,且β-二酮酸酯配体的CF3基团反过来CO配体。与母体acac复合物(3)相比,复合物(1)的热重分析显示出更高的挥发性,这归因于CF3基团减少了分子间吸引力。通过使用配合物(1)和(2)作为CVD源试剂,可以在H-2气氛中于350摄氏度至450摄氏度的温度下或在275摄氏度至400摄氏度的温度下使用2%的O沉积钌薄膜-2在氩气中作为载气。对于使用配合物(1)在100%O-2气氛下进行的沉积,可以获得具有优选(200)取向的RuO2薄膜。沉积后的薄膜通过表面和物理分析技术进行表征,例如扫描电子显微镜(SEM),X射线光电子能谱(XPS),X射线衍射分析(XRD)和四点探针测量。

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    Lai Y.-H.;

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  • 年度 2014
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  • 正文语种 [[iso]]en
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