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Process for producing simple or mixed metal oxides or silica

机译:生产简单或混合的金属氧化物或二氧化硅的方法

摘要

This invention relates to a method of manufacturing a product based on a simple or mixed metal oxide, or silicon oxide, from a charge of one or more precursors comprising one or more organic precursors. These oxides can be, for example, oxides of Ti, Al, Mg, Th, Si, Ba, Bc or Zr etc. The method comprises bringing the charge of organo-metallic precursors into contact with a reaction medium that comprises supercritical C02, at a temperature of from 31 to 100° C. and a supercritical pressure of from 3x107 to 5x107 Pa, in order to form from the precursor, a product based on a simple or mixed metal oxide, or silicon oxide, from the reaction medium by reducing the pressure of the supercritical C02 to a pressure lower than the supercritical pressure.
机译:本发明涉及一种基于简单或混合的金属氧化物或氧化硅的产物的制造方法,所述产物由一种或多种包含一种或多种有机前体的前体的装料组成。这些氧化物可以是例如Ti,Al,Mg,Th,Si,Ba,Bc或Zr等的氧化物。该方法包括使有机金属前体的电荷在20℃与包含超临界CO 2的反应介质接触。温度为31至100℃,超临界压力为3x107至5x107 Pa,以便由前体通过还原反应从反应介质中生成基于简单或混合的金属氧化物或氧化硅的产品将超临界CO 2的压力降低到低于超临界压力的压力。

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