METHOD FOR MULTILEVEL COPPER INTERCONNECTS FOR ULTRA LARGE SCALE INTEGRATION

摘要

A method of manufacturing integrated circuits using a thin metal oxide film (220)as a seed layer for building multilevel interconnects structures in integratedcircuits. Thin layer metal oxide films (220) are deposited on a wafer (210), andstandard optical lithography is used to expose the metal oxide film (220) in apattern corresponding to a metal line pattern (215). The metal oxide film (220)is converted to a layer of metal (240), and a metal film (250) may then be depositedon the converted oxide film (260) by either selective CVD or electroless plating.Via holes (280) are then fabricated in a similar process using via hole lithography.The process is continued until the desired multilevel structure is fabricated.