METHOD FOR MULTILEVEL COPPER INTERCONNECTS FOR ULTRA LARGE SCALE INTEGRATION

摘要

A method of manufacture integrated circuit, this method build multilevel interconnection structure in integrated circuits using thin metal oxide film as seed layer. Sheet metal oxide film deposition corresponds to the pattern of metal wire for the pattern of exposing metal oxidation film on chip and the photoetching of standard. The metal oxide film is transformed into one layer of metal, and the oxidation film that metal can be deposited over conversion passes through selectivity CVD or chemical plating. Via hole photoetching is used in the right post fabrication processing of via hole. The process, which is continued until, produces desired multilayered structure.