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Method for coating resist and developing the coated resist

机译:涂覆抗蚀剂并显影涂覆的抗蚀剂的方法

摘要

Disclosed is a resist coating-developing method, comprising (a) a setting step for setting a target value and an allowable range thereof in respect of each of a pattern line width and a thickness of a resist film which is to be formed on a substrate, (b) a resist-coating step (S5, S5A) for coating a surface of the substrate with a photoresist solution, (C) a pre-baking step for baking a photoresist film formed on the surface of the substrate, (d) a first cooling step for cooling the baked substrate, (e) a light-exposure step (S9, S9A) for selectively exposing the photoresist coating film to light in a predetermined pattern, (f) a line width measuring step (S11, S11A, S11B, S12A, S13A) for measuring a line width of a latent image formed on the resist coating film selectively exposed in advance to light, (g) a post-baking step (S12, S12A) for baking the resist coating film selectively exposed to light in advance to form a pattern, (h) a second cooling step for cooling the baked substrate, (i) a developing step (S14, S14A) for developing the resist coating film selectively exposed to light in advance to form a pattern by applying a developing solution to the substrate, (j) a judging step (S112) for judging whether or not the value of the line width of the latent image measured in the step (f) of measuring the latent image line width falls within the allowable range of the target value set in the step (a), (k) a calculating step (S113) for calculating a difference between the measured value of the latent image line width and the target value, when the measured value of the latent image line width fails to fall within the allowable range of the target value, so as to determine a correcting amount in the process conditions in the steps falling within a range of between the resist coating step (b) and the developing step (i), and (l) a correcting step (S5A, S9A, S12A, S14A) for correcting the process condition in at least one step selected from the group consisting of the resist coating step (b), light exposure step (e), post-baking step (g) and developing step (i), the correcting step being carried out in accordance with the correcting amount obtained in the step (k).
机译:公开了一种抗蚀剂涂层显影方法,包括:(a)设置步骤,该设置步骤用于相对于将要形成在基板上的抗蚀剂膜的图案线宽和厚度中的每一个来设定目标值及其容许范围。 (b)用光致抗蚀剂溶液涂布基板表面的抗蚀剂涂布步骤(S5,S5A),(C)烧制在基板表面上形成的光致抗蚀剂膜的预烘烤步骤,(d)第一冷却步骤,用于冷却烘烤的基板,(e)曝光步骤(S9,S9A),用于以预定图案选择性地将光致抗蚀剂涂膜曝光,(f)线宽测量步骤(S11,S11A, S11B,S12A,S13A)用于测量形成在预先选择性暴露于光的抗蚀剂涂膜上的潜像的线宽,(g)后烘烤步骤(S12,S12A),用于烘烤选择性暴露于光致抗蚀剂涂膜的后烘烤步骤(S12,S12A)。预先发光以形成图案,(h)第二冷却步骤,用于冷却烘焙的基板(i)显影步骤(S14,S14A),其用于通过将显影液施加到基板上而使预先选择性地暴露于光的抗蚀剂涂膜显影以形成图案,(j)判断步骤(S112)。在测量潜像线宽的步骤(f)中测量的潜像线宽的值不落在步骤(a)中设定的目标值的允许范围内,(k)计算步骤(S113) )计算潜像线宽的测量值与目标值之间的差,当潜像线宽的测量值未落在目标值的允许范围内时,确定校正量。步骤的处理条件落入抗蚀剂涂覆步骤(b)和显影步骤(i)之间的范围内,以及(l)用于校正温度为1.0℃的处理条件的校正步骤(S5A,S9A,S12A,S14A)。从由以下组成的组中选择的至少一个步骤抗蚀剂涂覆步骤(b),曝光步骤(e),后烘烤步骤(g)和显影步骤(i),根据在步骤(k)中获得的校正量进行校正步骤。

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