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Method for coating resist and developing the coated resist
Method for coating resist and developing the coated resist
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机译:涂覆抗蚀剂并显影涂覆的抗蚀剂的方法
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摘要
Disclosed is a resist coating-developing method, comprising (a) a setting step for setting a target value and an allowable range thereof in respect of each of a pattern line width and a thickness of a resist film which is to be formed on a substrate, (b) a resist-coating step (S5, S5A) for coating a surface of the substrate with a photoresist solution, (C) a pre-baking step for baking a photoresist film formed on the surface of the substrate, (d) a first cooling step for cooling the baked substrate, (e) a light-exposure step (S9, S9A) for selectively exposing the photoresist coating film to light in a predetermined pattern, (f) a line width measuring step (S11, S11A, S11B, S12A, S13A) for measuring a line width of a latent image formed on the resist coating film selectively exposed in advance to light, (g) a post-baking step (S12, S12A) for baking the resist coating film selectively exposed to light in advance to form a pattern, (h) a second cooling step for cooling the baked substrate, (i) a developing step (S14, S14A) for developing the resist coating film selectively exposed to light in advance to form a pattern by applying a developing solution to the substrate, (j) a judging step (S112) for judging whether or not the value of the line width of the latent image measured in the step (f) of measuring the latent image line width falls within the allowable range of the target value set in the step (a), (k) a calculating step (S113) for calculating a difference between the measured value of the latent image line width and the target value, when the measured value of the latent image line width fails to fall within the allowable range of the target value, so as to determine a correcting amount in the process conditions in the steps falling within a range of between the resist coating step (b) and the developing step (i), and (l) a correcting step (S5A, S9A, S12A, S14A) for correcting the process condition in at least one step selected from the group consisting of the resist coating step (b), light exposure step (e), post-baking step (g) and developing step (i), the correcting step being carried out in accordance with the correcting amount obtained in the step (k).
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