Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition

摘要

A method of forming tantalum nitride (TaN) compound layers (204) for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.