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CONCURRENT MULTI-BAND LOW NOISE AMPLIFIER ARCHITECTURE

机译:同步多频带低噪声放大器架构

摘要

The present invention relates to a monolithic, concurrent multi-band low noise amplifier (LNA). The inventive LNA includes a three-terminal active device, such as a transistor with a characteristic transconductance, gm, disposed on a semiconductor substrate. The active device has a control input terminal, an output terminal, and a current source terminal. The amplifier also includes an input impedance matching network system, Zin, and an output load network. Zin simultaneously and independently matches the frequency-dependent input impedance of the three-terminal active device to a predetermined characteristic impedance at two or more discrete frequency bands. The output load network simultaneously provides a voltage gain, Av, to an input signal at the amplifier input at each of the two or more discrete frequency bands.
机译:本发明涉及一种单片并发多频带低噪声放大器(LNA)。本发明的LNA包括设置在半导体衬底上的三端子有源器件,例如具有特性跨导gm的晶体管。有源设备具有控制输入端子,输出端子和电流源端子。该放大器还包括一个输入阻抗匹配网络系统Zin和一个输出负载网络。 Zin同时且独立地将三端有源器件的频率相关输入阻抗与两个或多个离散频带上的预定特性阻抗匹配。输出负载网络同时在两个或更多个离散频带中的每个频带的放大器输入端为输入信号提供电压增益Av。

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