PROCESS FOR CONTROLLING THERMAL HISTORY OF VACANCY-DOMINATED, SINGLE CRYSTAL SILICON

摘要

The production of vertical pulling method monocrystal silicon has uniform thermal history. In the process, the power being fed into side heater reduces the relatively aft section of main body, and optionally in end cone growth period, ingot casting, while the power for being fed into bottom heater gradually increases the identical part in growth. Most of crystal ingot can be obtained finished product chip and have few light point defects more than about 0. by method of the invention2 microns and improved gate oxide integrity.