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Process for controlling thermal history of vacancy-dominated, single crystal silicon
Process for controlling thermal history of vacancy-dominated, single crystal silicon
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机译:控制以空位为主的单晶硅的热历史的方法
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摘要
A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history. In the process, the power supplied to the side heater is decreased during the growth of a latter portion of main body, and optionally the end-cone, of the ingot, while power supplied to a bottom heater is gradually increased during growth the same portion. The present process enables a substantial portion of an ingot to be obtained yielding wafers having fewer light point defects in excess of about 0.2 microns and improved gate oxide integrity.
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