METHOD FOR PREPARING BISMUTH OXIDE THIN FILMS BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A method for manufacturing a Bi2O3 thin film by metal-organic chemical vapor deposition(MOCVD) is provided to produce a large quantity of the Bi2O3 thin film under the condition of low or ambient pressure and temperature of 200 degree Celsius to 700 degree Celsius, pouring Bi-containing organic metal and oxygen-containing gas or organic material through separate supplying lines. CONSTITUTION: A Bi2O3 thin film is grown on each material such as SiO2, Si, Al2O3 (0001) and Al2O3 (1100), using MOCVD facility shown in the figure. (CH3)3Bi and O2 are employed as reaction material and Ar gas is used as a transporting one. Each of them is poured through the separate lines. While the thin film is being grown for an hour, the pressure and temperature inside a reactor are preserved at 760mmHg and 500 degree Celsius respectively and the speed of the gas flow is adjusted to 100sccm for Ar gas, 5 to 10sccm for (CH3)3Bi and 40 to 50sccm. After growing, the thin film is processed thermally at 75 degree Celsius under the oxygen ambient.