ZINC MAGNESIUM OXIDE THIN FILMS AND METHOD FOR PREPARING SAME BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A method is provided to prepare Zn1-xMgxO thin films in a large quantities by chemical vapor deposition under temperature of 200 to 800 deg.C and pressure of 10¬-3 to 760 mmHg as controllably injecting Zn contained organic metal, Mg contained organic metal and oxygen contained gas or organic matter into each reactors. CONSTITUTION: The method for preparing Zn1-xMgxO (0x1) thin films by metal-organic chemical vapor deposition is characterized in that the thin films are grown on a substrate as injecting Zn contained organic metal, Mg contained organic metal and oxygen contained gas or organic matter into each reactors through separate lines, wherein carrier gases containing the Zn contained organic metal and the Mg contained organic metal, and oxygen contained gas or organic matter are injected in the flow rate range of 0.1 to 10 sccm, 5 to 50 sccm and 20 to 100 sccm respectively, the Zn1-xMgxO (0x1) thin films are prepared at the temperature of 200 to 800 deg.C and pressure of 10¬-3 to 760 mmHg, the Zn contained organic metal is dimethyl zinc, diethyl zinc, zinc acetate, zinc acetate anhydride, or zinc acetylacetonate, the Mg contained organic metal is selected from the group consisting of bis-cyclopentadienyl magnesium, bis-methylcyclopentadienyl magnesium, bis-ethylcyclopentadienyl magnesium, bis-pentamethylcyclopentadienyl magnesium, magnesium acetate, magnesium acetate anhydride and magnesium acetylacetonate, the oxygen contained gas is O2, O3, NO2, vapor or CO2, and the oxygen contained organic matter is C4H8O.