METHOD FOR INCREASING THE VERY-LARGE-SCALE-INTEGRATED VLSI CAPACITOR SIZE ON BULK SILICON AND SILICON-ON-INSULATOR SOI WAFERS AND STRUCTURE FORMED THEREBY

摘要

A method of forming a semiconductor device includes forming at least one conductive island having a predetermined sidewall angle on a conductive substrate, forming a dielectric material over the at least one conductive island, and forming the at least one conductive island and the conductive material. Forming a contact to the furnace.