10 METHOD FOR FORMING GROUP 10 METAL LAYER USING CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A method for fabricating a group 10 metal layer through a chemical vapor deposition(CVD) process is provided to prevent impurities like carbon, hydrogen or oxygen from being left by using a precursor including a neutral ligand as a precursor for depositing the group 10 metal layer. CONSTITUTION: A deposited layer is loaded into a reaction chamber. The deposited layer is heated. The neutral ligand(14) and a group 10 metal precursor(12) are vaporized and transferred to the inside of the reaction chamber. The transferred group 10 metal precursor is thermally analyzed to deposit the group 10 metal layer on the deposited layer. The deposited layer is heated at a temperature of 100-900 deg.C.