TRIMMING METHOD AND SYSTEM FOR WORDLINE BOOSTER TO MINIMIZE PROCESS VARIATION OF BOOSTED WORDLINE VOLTAGE

摘要

The present invention discloses a method and system for controlling a boosted wordline voltage used during a read operation in the flash memory 10. In a preferred embodiment, the gate voltage is generated by a voltage booster (48) in wordline voltage booster circuit (20). An adjustable clamp circuit (12) is electrically connected to the wordline voltage booster circuit (20) so as to clamp the gate voltage generated by the voltage booster (48) to a predetermined voltage level. Predetermined voltage level depending on the process variations experienced during the manufacture by the adjustable clamp circuit 12, is adjusted by the trimming circuit 14 is electrically connected to the adjustable clamp circuit (12).