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INTEGRATED MEMORY WITH AN ARRANGEMENT OF NON-VOLATILE MEMORY CELLS AND METHOD FOR THE PRODUCTION AND OPERATION OF AN INTEGRATED MEMORY
INTEGRATED MEMORY WITH AN ARRANGEMENT OF NON-VOLATILE MEMORY CELLS AND METHOD FOR THE PRODUCTION AND OPERATION OF AN INTEGRATED MEMORY
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机译:具有非挥发性记忆细胞排列的整合式记忆体以及该整合式记忆体的生产与运作方法
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摘要
An integrated memory with a configuration of non-volatile memory cells based on ferromagnetic storage contains both powerful memory cells with a magnetoresistive effect with a transistor control and cost-effective memory cells with a magnetoresistive effect with memory elements connected between the word lines and bit lines. The memory elements connected directly between the bit line and the word line are preferably inserted in memory cell arrays that can be stacked one above the other above the memory cells with the transistor, and thereby achieve a high integration density. The fact that the memory, which contains both types and thereby satisfies all the system requirements, is fabricated in one module and in one process sequence considerably lowers the fabrication costs.
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