Chinese researchers develop high-performance integrated solid-state quantum memory

摘要

Chinese researchers have developed a high-fidelity integrated solid-state quantum memory,making important progress in the field of quantum storage and laying a solid foundation for developing a quantum network.The achievement was made by a team of researchers led by Li Chafing and Zhou Zongquan with the University of Science and Technology of China.It has been published in the journals Optica and Applied Physics Reviews.