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MULTILAYERED PINNED LAYER STRUCTURE FOR IMPROVED COUPLING FIELD AND GMR FOR SPIN VALVE SENSORS
MULTILAYERED PINNED LAYER STRUCTURE FOR IMPROVED COUPLING FIELD AND GMR FOR SPIN VALVE SENSORS
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机译:改进的耦合场的多层钉层结构和自旋阀传感器的GMR
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摘要
A multifilm structure is provided for a pinned layer structure of a spin valve sensor for increasing the magnetoresistive coefficient (dr/R) of the sensor and/or decreasing a ferromagnetic coupling field (HF) between the pinned layer structure and the free layer of the sensor. The multifilm structure for the pinned layer in one or both AP layers of an AP pinned layer structure or a single pinned layer structure includes a nickel iron (NiFe) middle layer which is located between a cobalt (Co) first film and a cobalt (Co) second film.
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