Bismuth-cerium Titanate Thin Film for Capacitor of Ferroelectric Random Access Memory

摘要

PURPOSE: A £Bi,Ce|4Ti3O12 membrane for capacitor of a non-volatile ferroelectric RAM is provided to reduce a fatigue phenomenon of the membrane by using an improved £Bi,Ce|4Ti3O12 membrane. CONSTITUTION: A titanium precursor and a mixture of a bismuth precursor having Ce/(Ce+Bi) of 0.01 to 0.99 and a cerium precursor are deposited on a substrate under a temperature of 30 to 800 degrees centigrade and a pressure of 1x10¬-9 Torr to 100atm by using a wet deposition method and a dry deposition method. A thermal process for the deposited membrane is performed under a thermal rising ratio of 100 to 600 degrees centigrade per minute and the temperature of 200 to 800 degrees centigrade. An LSMCD(Liquid Source Misted Chemical Deposition) method using an organic solvent, a sol-gel method or a metal organic decomposition method are used as the wet etch method.