BIPOLAR SILICON-ON-INSULATOR TRANSISTOR WITH INCREASED BREAKDOWN VOLTAGE

摘要

(1) comprising a substrate (1) having a major surface, an oxide layer (2) on the main surface, a silicon layer (3) of a first conductivity type on the oxide layer (2) A first conductivity type emitter region 5 extending into the base region 4 and a second conductivity type emitter region 5 extending horizontally from the base region 4 and extending into the silicon layer 3, A silicon transistor on a bipolar isolation substrate comprising a collector region (6) of a conduction type, characterized in that a plug region (8) of a second conductivity type extends over the silicon layer (3) (8) of the plug region (8) extends from the base region (4) to the oxide layer (2) Extend horizontally toward the collector region 6 along the surface of the oxide layer 2, Lug region is electrically connected to the base region (4).