首页> 外国专利> CONSTANT CURRENT GENERATION CIRCUIT, CONSTANT VOLTAGE GENERATION CIRCUIT, CONSTANT VOLTAGE/CONSTANT CURRENT GENERATION CIRCUIT, AND AMPLIFICATION CIRCUIT

CONSTANT CURRENT GENERATION CIRCUIT, CONSTANT VOLTAGE GENERATION CIRCUIT, CONSTANT VOLTAGE/CONSTANT CURRENT GENERATION CIRCUIT, AND AMPLIFICATION CIRCUIT

机译:恒定电流产生电路,恒定电压产生电路,恒定电压/恒定电流产生电路和放大电路

摘要

A current flows through an n-channel MOS field effect transistor in a constant current generation circuit, and a current which is equal to or a constant multiple of the current flows through a resistor. A bias is set such that the transistor operates in a saturation region. A voltage applied across both ends of a resistor is uniquely determined by a gate-source voltage of the transistor. The difference between a threshold voltage of the transistor and a voltage applied across both ends of the resistor is set within a range of 0.1 volts to 0.4 volts, so that the current flowing through the resistor is made constant without depending on the temperature change.
机译:电流流过恒定电流产生电路中的n沟道MOS场效应晶体管,并且等于或等于电流常数倍的电流流过电阻器。设置偏置使得晶体管在饱和区域中操作。施加在电阻两端的电压唯一地由晶体管的栅极-源极电压确定。晶体管的阈值电压与施加在电阻器两端之间的电压之间的差被设置在0.1伏特至0.4伏特的范围内,从而使得流经电阻器的电流恒定而不依赖于温度变化。

著录项

  • 公开/公告号KR100399861B1

    专利类型

  • 公开/公告日2003-09-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010047896

  • 发明设计人 와다아쯔시;다니구니유끼;

    申请日2001-08-09

  • 分类号G05F3/26;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:07

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